Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA |
| 发表日期 | 1982-06-03 |
| 专利号 | JP1982089288A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To facilitate stable operation for long hours and a long service life by providing a certain density of impurity forming a p type clad layer, an active layer, an n type clad layer doped with Te on a p type GaAs. CONSTITUTION:A V shaped groove 27 is formed in an n type current limiting layer 22 formed on a type GaAs substrate and a p type clad layer, an n type active layer 24, an n type clad layer 25 doped with Te and a cap layer 26 are consecutively formed. The thickness of the active layer 24 is maximum at the center of the V shaped groove 27 producing the distribution of refractive index in horizontal direction. The laser element with stable operation for a long service life is obtained. |
| 公开日期 | 1982-06-03 |
| 申请日期 | 1980-11-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84117]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982089288A. 1982-06-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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