Ridge waveguide semiconductor laser diode
文献类型：专利
| 作者 | OHKUBO, MICHIO; IKEGAMI, YOSHIKAZU; NAMEGAYA, TAKESHI; KASUKAWA, AKIHIKO |
| 发表日期 | 2002-02-28 |
| 专利号 | US20020024984A1 |
| 著作权人 | FURUKAWA ELECTRIC CO., LTD., THE |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Ridge waveguide semiconductor laser diode |
| 英文摘要 | A GaAs based semiconductor laser has a combination of cladding layers including a ridge structure part, and a remaining part which overlays the active layers of the laser, and an etch stop layer sandwiched between the ridge structure part and the remaining part. The remaining part preferably overlies the entire surface of laser active layers and has a thickness "D" which satisfies 1xW>D>=0.5xW wherein W is the width of a spot size having a strength of {fraction (1/e2)} as measured at the laser front facet in a direction perpendicular to the active layers, wherein "e" is the base of the natural logarithm. The semiconductor laser solves the kink phenomenon to obtain an excellent linear relationship between the optical output power and the injected current. |
| 公开日期 | 2002-02-28 |
| 申请日期 | 2001-06-01 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84118]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO., LTD., THE |
| 推荐引用方式 GB/T 7714 | OHKUBO, MICHIO,IKEGAMI, YOSHIKAZU,NAMEGAYA, TAKESHI,et al. Ridge waveguide semiconductor laser diode. US20020024984A1. 2002-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。