Semiconductor light emitting device
文献类型：专利
| 作者 | WAKAO KIYOHIDE |
| 发表日期 | 1988-01-23 |
| 专利号 | JP1988016690A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the oscillation characteristic of a semiconductor light emitting device by forming a semiconductor layer having a large band gap by an energy level difference between electrons and holes with respect to the laser oscillation of an active region to prevent the generation of a light absorption loss. CONSTITUTION:A corrugation 7 of a diffraction grating is formed on a part of an AlGaAs guide layer 4, and an impurity, such as a zinc is diffused in a range 8 which arrives at an N-type AlGaAe clad layer 2 from the surface of a GaAs contact layer 6. Then, the width of an optical guide is mesa etched to approx. 3mum, a P-type AlGaAs layer and an N-type AlGaAs layer are buried and grown, and a P-type electrode 9 is disposed on the layer 6 of a part held with a quantum well structure 3 and an N-type side electrode 10 is disposed on the rear surface of a substrate without forming the corrugation 7 of a semiconductor substrate. In this case, the energy level difference between the sub band ends of electrons and holes of a base level with respect to a laser oscillation of the structure 3 for forming an active region is 53eV, and an oscillation wavelength is 0.82mum, while the band gap of the semiconductor layer disordered by diffusing Zn is approx. 5eV, and does not absorb the light of the oscillation wavelength. |
| 公开日期 | 1988-01-23 |
| 申请日期 | 1986-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84122]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE. Semiconductor light emitting device. JP1988016690A. 1988-01-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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