Semiconductor laser
文献类型：专利
| 作者 | TAKIGAWA SHINICHI; KUME MASAHIRO; SHIMIZU YUICHI |
| 发表日期 | 1990-09-25 |
| 专利号 | JP1990241075A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture the title semiconductor laser in stable threshold value difference between respective vertical mode and stable wavelength even in high output state by a method wherein a film having a dependence of the reflectance on the wavelength is formed on a laser beam emitting end. CONSTITUTION:Within the title laser, a film having a dependence of the reflectance (a) on the wavelength is formed on a laser beam emitting end. For example, within a Fabry-Perot semiconductor, the thickness of a coating film comprising a dielectric fixed on a laser beam emitting end is made sufficiently larger than the wavelength (c) in the coating film to enhance the dependence of the coating film upon the wavelength of end reflecting power so that the threshold value difference between respective vertical modes may be made by the dependence. Finally, the said dielectric is to be e.g. TiZrO4 (refractive index of 9) with the thickness thereof 50.5 times of wavelength inside the dielectric as well as the dependence upon reflecting power wavelength as shown in figure. |
| 公开日期 | 1990-09-25 |
| 申请日期 | 1989-03-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84123]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | TAKIGAWA SHINICHI,KUME MASAHIRO,SHIMIZU YUICHI. Semiconductor laser. JP1990241075A. 1990-09-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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