Semiconductor laser diode
文献类型：专利
| 作者 | ONOMURA, MASAAKI; SUZUKI, MARIKO; ISHIKAWA, MASAYUKI |
| 发表日期 | 2002-04-04 |
| 专利号 | US20020039374A1 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser diode |
| 英文摘要 | The present invention provides a nitride semiconductor laser by which stable high power room-temperature continuous-wave oscillation in fundamental mode is possible. A semiconductor laser diode comprising: a GaN layer; a first conductive type nitride semiconductor layer formed on said GaN layer and made of AlxGa1-xN(0.04<=x<=0.08); a first conductive type clad layer formed on said first conductive type nitride semiconductor layer and made of nitride semiconductor; a core area formed on said first conductive type clad layer and made of nitride semiconductor, said core area including an active layer to emit light by electric current injection; and a second conductive type clad layer formed on said core area and made of nitride semiconductor. |
| 公开日期 | 2002-04-04 |
| 申请日期 | 2001-09-28 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84126]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ONOMURA, MASAAKI,SUZUKI, MARIKO,ISHIKAWA, MASAYUKI. Semiconductor laser diode. US20020039374A1. 2002-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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