Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | YAMAZOE YOSHIMITSU; NISHIZAWA HIDEAKI; OKUDA HIROSHI |
| 发表日期 | 1983-06-30 |
| 专利号 | JP1983110086A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To simplify the manufacturing process as well as to obtain the buried type element of high performance by a method wherein an insulating thin film material having a striped type window is provided on the first conductive type substrate, and a clad layer, consisting of the first or the second conductive type active layer and the second conductive type clad layer and a contact layer, are laminated one upon another. CONSTITUTION:An amorphous insulating material thin film 2 such as SiO2 is grown on an N type InP substrate 7 using CVD method, and an exposed surface 13 is generated on the substrate 7 corresponding to a strap forming region by performing a photolithographic method and a chemical etching method. Then, utilizing the characteristic wherein a single crystal layer alone is generated on the exposed surface 13 when an epitaxial growing method is performed, an N type first clad layer 6, an In1-x, Gax, ASy, P1-y, layer 3 are laminated and epitaxially grown on the whole surface. Through these procedures, the desired striped buried structure is obtained, and a P type and an N type electrodes 3 and 9 are coated on the front and the back sides. |
| 公开日期 | 1983-06-30 |
| 申请日期 | 1981-12-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84127]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | YAMAZOE YOSHIMITSU,NISHIZAWA HIDEAKI,OKUDA HIROSHI. Semiconductor laser and manufacture thereof. JP1983110086A. 1983-06-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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