Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | WAKAO KIYOHIDE; KOBAYASHI HIROHIKO |
| 发表日期 | 1990-01-17 |
| 专利号 | JP1990012985A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To increase the contact area of an electrode with a cap layer, and to reduce a contact resistance by forming the layer for an electrode contact in a crest state (in a triangular sectional state). CONSTITUTION:(In+Ga+P+As) growing solution 13 surrounded by a carbon material 12 is set to approx. 585 deg.C of saturated temperature, moved on a base 11 in a direction of an arrow, and liquid grown on the surface of a wafer 14. In this case, the surface of the wafer is set to 580 deg.C. Thus, the solution 13 is gradually grown as a single crystalline layer of an InGaPAs layer 21 in contact with the surface of the wafer 14, but since the solution 13 of 585 deg.C is in a large oversaturation state, it is abnormally grown in a crest state (in a triangular state). Thereafter, when this P type InGaPAs layer 21 (cap layer) is coated at both side faces with P-type electrode layers, the contact area of the cap layer with the electrode layers is increased, thereby reducing the contact resistance that much. |
| 公开日期 | 1990-01-17 |
| 申请日期 | 1988-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84132]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | WAKAO KIYOHIDE,KOBAYASHI HIROHIKO. Semiconductor device and manufacture thereof. JP1990012985A. 1990-01-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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