Semiconductor laser
文献类型：专利
| 作者 | TERAKADO TOMOJI |
| 发表日期 | 1991-04-22 |
| 专利号 | JP1991095985A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To enlarge the hetero barrier of the conductive band between a luminous layer and a second clad layer by putting it in such structure that the luminous layer consisting of InGaAs or InGaAs the grating constant of which is approximately equal to InP is caught by a first clad layer consisting of specific substance and a second clad layer consisting of specific substance. CONSTITUTION:On an n-InP substrate 10, for example, 350mum thick, a first clad layer 11 consisting of n-InP, a luminous layer 12 consisting of p-InGaAsO, a second clad layer 13 consisting of p-InGaAs, and a cap layer 14 consisting of p-InGaAsP are grown by vapor growth method or a molecular beam growth method. Next, a contact region 16, which has high p-type impurity concentration, is formed in the shape of a stripe 5mum wide by the selective impurity diffusion method of Zn wherein a dielectric is used as a mask 15, and then a p-electrode 17 consisting of AuZn is formed. By forming an n-electrode 18 consisting of AuGeNi on the rear side after polishing the rear of the n-InP substrate 10 into the thickness of about 100mum, it becomes possible to enlarge the hetero barrier of the conductive band between a luminous layer and a second clad layer current injection. |
| 公开日期 | 1991-04-22 |
| 申请日期 | 1989-09-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84135]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | TERAKADO TOMOJI. Semiconductor laser. JP1991095985A. 1991-04-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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