Group III nitride compound semiconductor laser
文献类型：专利
| 作者 | KOIKE, MASAYOSHI; YAMASAKI, SHIRO; TEZEN, YUTA; NAGAI, SEIJI; KOJIMA, AKIRA; HIRAMATSU, TOSHIO |
| 发表日期 | 2004-01-20 |
| 专利号 | US6680957 |
| 著作权人 | JAPAN SCIENCE AND TECHNOLOGY AGENCY |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Group III nitride compound semiconductor laser |
| 英文摘要 | A semiconductor laser 101 comprises a sapphire substrate 1, an AlN buffer layer 2, Si-doped GaN n-layer 3, Si-doped Al0.1Ga0.9N n-cladding layer 4, Si-doped GaN n-guide layer 5, an active layer 6 having multiple quantum well (MQW) structure in which about 35 Å in thickness of GaN barrier layer 62 and about 35 Å in thickness of Ga0.95In0.05N well layer 61 are laminated alternately, Mg-doped GaN p-guide layer 7, Mg-doped Al0.1Ga0.9N p-cladding layer 8, and Mg-doped GaN p-contact layer 9 are formed successively thereon. A ridged hole injection part B which contacts to a ridged resonator part A is formed to have the same width as the width w of an Ni electrode 10. Holes transmitted from the Ni electrode 10 are injected to the active layer 6 with high current density, and electric current threshold for laser oscillation can be decreased. Electric current threshold can be improved more effectively by forming also the p-guide layer 7 to have the same width as the width w of the Ni electrode 10. |
| 公开日期 | 2004-01-20 |
| 申请日期 | 2000-02-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84137]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JAPAN SCIENCE AND TECHNOLOGY AGENCY |
| 推荐引用方式 GB/T 7714 | KOIKE, MASAYOSHI,YAMASAKI, SHIRO,TEZEN, YUTA,et al. Group III nitride compound semiconductor laser. US6680957. 2004-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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