Semiconductor light-emitting element
文献类型：专利
| 作者 | KAWADA HATSUMI |
| 发表日期 | 1986-09-30 |
| 专利号 | JP1986220392A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To improve the controllability of a transverse mode, and to obtain a beam shape close to a circle at a low threshold by selectively diffusing a second conduction type impurity from a striped region in the surface of a contact layer laminated and grown in succession and forming a second conduction type region reaching a second clad layer. CONSTITUTION:A first clad layer 12 consisting of n-type AlyGa1-yAs, an active layer 13 composed of un-doped AlxGa1-xAs and a second clad layer 14 consisting of p-type AlyGa1-yAs are laminated on an n-type GaAs substrate 11 successively. An optical guide layer 15 composed of n type AlzGa1-zAs and a contact layer 16 consisting of n-type GaAs are laminated and grown on the layer 14. That is, the optical guide layer 15 is shaped as an n type and the contact layer 16 as an n-type. When zinc as a p-type impurity is diffused selectively from the surface of the contact layer 16, a striped p type region 17 reaching the second clad layer 14 is formed, currents flow only through the p type region 17, and a striped light-emitting region is limited. |
| 公开日期 | 1986-09-30 |
| 申请日期 | 1985-03-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84139]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KAWADA HATSUMI. Semiconductor light-emitting element. JP1986220392A. 1986-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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