Distributed feedback type semiconductor laser
文献类型：专利
| 作者 | SUZAKI SHINZOU |
| 发表日期 | 1985-11-29 |
| 专利号 | JP1985240178A |
| 著作权人 | FUJIKURA DENSEN KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser |
| 英文摘要 | PURPOSE:To diffract electromagnetic waves generated in an active layer at a diffraction grating surface efficiently, by providing the diffraction grating surface on either surface of an intermediate layer in three semiconductor layers, in which light is mainly confined. CONSTITUTION:On an N-InP substrate 1, an N-InGaAsP light guide layer 9, an N-InP intermediate layer 10, an InGaAsP active layer 4, a P-InP clad layer 5 and P-InP surface layer 6 are epitaxially grown in sequence. An electromagnetic wave (or light), which is generated by the active layer, is confined mainly in a region between the semiconductor layers 1 and 5 and propagated. The region, in which the light is mainly confined, has the three-layer structure, wherein a diffraction grating surface is formed on the active layer on the side of the light guide layer (i.e., the diffraction grating surface is also formed on the surface of the light guide layer). The position of the diffraction grating surface 2 is included in a range, where the distribution of the electromagnetic field is relatively large. In this constitution, the position of the diffraction grating is made to agree with the coordinates (position), where the electromagnetic field distribution becomes the maximum. |
| 公开日期 | 1985-11-29 |
| 申请日期 | 1984-05-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84145]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJIKURA DENSEN KK |
| 推荐引用方式 GB/T 7714 | SUZAKI SHINZOU. Distributed feedback type semiconductor laser. JP1985240178A. 1985-11-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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