中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Semiconductor laser element

文献类型:专利

作者KASAI SHUSUKE; HAYASHI HIROSHI; MORIMOTO TAIJI; KANEIWA SHINJI; YAMAGUCHI MASAHIRO
发表日期1989-05-24
专利号JP1989132191A
著作权人SHARP KK
国家日本
文献子类发明申请
其他题名Semiconductor laser element
英文摘要PURPOSE:To obtain a semiconductor laser element which is operated stably in a high output state by a method wherein a channel width at least near one end face part of a resonator is formed to be wider as compared with the control part of the resonator in order to suppress a deterioration at an end face of the semiconductor resonator. CONSTITUTION:A channel to be used as a current route is formed in a main part on a substrate 11; multilayer structures 12-16 including an active layer 14 for laser oscillation use are deposited on the substrate 11; a difference in an effective refractive index on the basis of a difference in light absorption by the substrate is provided between the outside and the inside of the channel. In this semiconductor laser element of a refractive-index waveguide type, the active layer 14 is made flat and uniform over its whole face; a channel width W2 in parts A, C at least near end faces of a resonator inside a waveguide route is formed to be wider as compared with a channel width W1 in the central part B of the resonator. For example, an n-GaAs current- blocking layer 12 is deposited on a p-GaAs substrate 11, a groove whose width W2 near an and face is 10mum, whose width W1 in the central part of the resonator is 4mum and whose depth is 1mum is formed; after that, multilayer structures 12-16 are formed.
公开日期1989-05-24
申请日期1987-12-29
状态失效
源URL[http://ir.opt.ac.cn/handle/181661/84159]  
专题半导体激光器专利数据库
作者单位SHARP KK
推荐引用方式
GB/T 7714
KASAI SHUSUKE,HAYASHI HIROSHI,MORIMOTO TAIJI,et al. Semiconductor laser element. JP1989132191A. 1989-05-24.

入库方式: OAI收割

来源:西安光学精密机械研究所

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