Semiconductor laser element
文献类型：专利
| 作者 | TAKENAKA TAKUO; KANEIWA SHINJI; YANO MORICHIKA |
| 发表日期 | 1984-02-18 |
| 专利号 | JP1984031083A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a laser element wherein the yield of element does not decrease even in the presence of the dispersion of growth by a method wherein a P type diffused layer is formed in an N type inside current block layer, and a channel is formed in this diffused layer, in a laser element of a CSIS structure. CONSTITUTION:The inside current block layer 2 composed of N type GaAs is deposited on a substrate 1 composed of P type GaAs, and a P type diffused layer 10 is formed at the part to become a wave guide of this inside current block layer 2, until it reaches the P type semiconductor substrate Then, the channel 3 serving as a current passage is formed in this P type diffused layer 10. Thereafter, the first clad layer 4, an active layer 5, the second clad layer 6, a cap layer 7, and electrodes 8, 9 are formed in the same manner as in a conventional CSIS structure. This constitution enbles to improve the defective due to the turn-on and non-conductive of the current block layer even in the presence of the more or less dispersion of layer thicknesses of the current block layer 2 and the first clad layer 4; therefore the yield of the manufacture can be improved. |
| 公开日期 | 1984-02-18 |
| 申请日期 | 1982-08-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | TAKENAKA TAKUO,KANEIWA SHINJI,YANO MORICHIKA. Semiconductor laser element. JP1984031083A. 1984-02-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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