半導体レ-ザ
文献类型：专利
| 作者 | 原 利民; 関口 芳信; 宮沢 誠一; 野尻 英章; 清水 明; 袴田 勲 |
| 发表日期 | 1994-04-27 |
| 专利号 | JP1994032339B2 |
| 著作权人 | CANON INC |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To reduce the dispersion of film quality, and to improve yield by minimizing the film thickness ratio of each film thickness of a material for adjacent wide gaps and a material for narrow gaps constituting a superlattice structure region in proportion to a proceeding toward an active layer. CONSTITUTION:An N type layer 22 is grown on an N type substrate 21 through an epitaxial method, an N type layer 23 is grown, a shutter is opened or closed in a process, and an active layer and a beam confinement layer 24 are formed. A P type layer 25 and a P type layer 26 are laminated. A beam confinement layer 12 is shaped so that the film thickness ratio (LB, LW) of each film thickness LB, LW of a material for adjacent wide gaps and a material for narrow gaps in a superlattice structure region is reduced as an inclination in the whole surface with a proceeding toward the center (the active layer 11) regarding the mode of the laminating of superlattice structure films, the active layer and the beam confinement layer. Accordingly, film thickness prepared is equalized, thus improving yield while enabling laser oscillation at low threshold density. |
| 公开日期 | 1994-04-27 |
| 申请日期 | 1984-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84162]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | 原 利民,関口 芳信,宮沢 誠一,等. 半導体レ-ザ. JP1994032339B2. 1994-04-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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