Semiconductor optical device and method of manufacturing the same
文献类型：专利
| 作者 | IGA, RYUZO; KONDO, SUSUMU; OGASAWARA, MATSUYUKI; KONDO, YASUHIRO |
| 发表日期 | 2006-01-24 |
| 专利号 | US6990131 |
| 著作权人 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor optical device and method of manufacturing the same |
| 英文摘要 | A semiconductor optical device includes a multilayer structure and buried layers. The multilayer structure is constituted by a cladding layer having an n-type conductivity, an active region formed from an active layer or photoabsorption layer, and a cladding layer having a p-type conductivity which are successively formed on a semiconductor substrate having the first crystallographic orientation. The buried layers are made of a ruthenium-doped semi-insulating semiconductor crystal and formed on two sides of the mesa-stripe-like multilayer structure. The electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the second crystallographic orientation which is formed in the process of growing the semi-insulating semiconductor crystal is substantially equal to or higher than the electrically activated ruthenium concentration in the ruthenium-doped semi-insulating semiconductor crystal grown on the growth surface having the first crystallographic orientation wherein the second crystallographic orientation is different from the first crystallographic orientation. An integrated light source and a method of manufacturing a semiconductor optical device are also disclosed. |
| 公开日期 | 2006-01-24 |
| 申请日期 | 2002-08-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84166]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
| 推荐引用方式 GB/T 7714 | IGA, RYUZO,KONDO, SUSUMU,OGASAWARA, MATSUYUKI,et al. Semiconductor optical device and method of manufacturing the same. US6990131. 2006-01-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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