Semiconductor laser
文献类型：专利
| 作者 | SUGIMOTO MITSUNORI; HAMAO NOBORU |
| 发表日期 | 1989-11-08 |
| 专利号 | JP1989278085A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To reduce a leakage current and to enhance the differential quantum efficiency by forming a current-blocking layer after Ga has been introduced into a region excluding a stripe-shaped region in a p-type clad layer. CONSTITUTION:An active layer 3, an n-type clad layer 2 and a p-type clad layer 4 which is composed of p-AlGaAs are formed in such a way that the active layer is sandwiched; Ga is introduced into a part other than a stripe region 11 in the p-type clad layer 4. When ions of Ga are implanted into Be- doped p-AlGaAs, this is transformed into n-type AlGaAs in order to form a current-blocking layer 6 whose impurity concentration is low at about 1017-1018cm. By this setup, a semiconductor laser whose leakage current is small and whose differential quantum efficiency is good can be realized. |
| 公开日期 | 1989-11-08 |
| 申请日期 | 1988-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84170]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | SUGIMOTO MITSUNORI,HAMAO NOBORU. Semiconductor laser. JP1989278085A. 1989-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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