Surface emitting laser
文献类型：专利
| 作者 | JIANG, WENBIN; SHIEH, CHAN-LONG; SUN, XIQING; LEE, HSING-CHUNG |
| 发表日期 | 2002-10-31 |
| 专利号 | US20020159491A1 |
| 著作权人 | JIANG WENBIN |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface emitting laser |
| 英文摘要 | A surface emitting diode, such as a laser, including an active region positioned between first and second semiconductor layers and extending longitudinally. The active region and at least portions of the first and second semiconductor layers defining first and second facets positioned at opposite ends of the length with the first facet defining a light output for the active region. The active region is adjusted to emit a single mode of light. A reflective element is positioned adjacent to the first facet and at an angle with the first facet for receiving light output from the active region and directing the light perpendicular to the active region. |
| 公开日期 | 2002-10-31 |
| 申请日期 | 2001-04-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84173]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | JIANG WENBIN |
| 推荐引用方式 GB/T 7714 | JIANG, WENBIN,SHIEH, CHAN-LONG,SUN, XIQING,et al. Surface emitting laser. US20020159491A1. 2002-10-31. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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