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文献类型：专利
| 作者 | SHINOHARA KOJI; NISHIJIMA YOSHITO; FUKUDA HIROKAZU; KAWABATA YOSHIO; YAMAMOTO KOSAKU |
| 发表日期 | 1987-09-30 |
| 专利号 | JP1987046079B2 |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To form a laser element having double heterojunction structure according to the liquid phase epitaxial growth method by a method wherein crystal layers of an active layer and a top layer having the desired composition are enabled to be obtained by making SSe and S being the easily evaporable components are made to be molten in a liquid phase of Pb of the prescribed quantity. CONSTITUTION:A P type PbS substrate 2, a PbS1-XSeX thin plate 3 for dummy being the compound of easily evaporable selenium sulfide (SSe) and Pb, and a lead sulfide (PbS) thin plate 4 for dummy being the compound of sulfur (S) and Pb are buried in a supporting base plate 1 consisting of carbon, for example. While Pb is filled up in sliding members 5, 6, and 7 to transfer on the supporting base plate. After the liquid phase epitaxial growth device like this is inserted in a reaction tube in the hydrogen (H2) gas atmosphere, the reaction tube is heated at the temperature of 500 deg.C in a heating furnace, and the member 5 is transferred in the direction shown with an arrow mark A when Pb is molten. Accordingly the P type PbS1-XSeX crystal layer introduced with SSe is formed as the crystal layer of the active layer 11 of the first layer, and the P type PbS crystal layer is formed as the crystal layer of the top layer 12 of the second layer on the PbS substrate 2. |
| 公开日期 | 1987-09-30 |
| 申请日期 | 1981-06-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84175]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHINOHARA KOJI,NISHIJIMA YOSHITO,FUKUDA HIROKAZU,et al. -. JP1987046079B2. 1987-09-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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