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文献类型：专利
| 作者 | SUZUKI TOORU; KOBAYASHI KENICHI |
| 发表日期 | 1993-08-06 |
| 专利号 | JP1993052678B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To realize a high-output semiconductor laser stably oscillating in the single transverse mode by a method wherein a double heterostructure is adopted wherein both sides of a mesa striped semiconductor layer with its refractive index lower than that of an activation layer is sandwiched between semiconductor layers with a lower refractive index and the activation layer is separated into two respectively to be positioned at the upper and lower positions of the mesa stripe. CONSTITUTION:A mesa 100 is constituted of a first semiconductor layer 30, with a refractive index higher than an activation layer 4, sandwiched between semiconductor layers 20 with a lower value in refractive index. The activation layer 4 is separated into two, one in the upper portion and the other in the lower portion of the mesa 100. The portions of the activation layer 4 are separated by a clad layer 3. A second clad layer 5 is positioned on the activation layer 4. The higher activation layer 4 on top of the mesa 100 constitutes an optical waveguide. With the refractive index of the semiconductor 30 being higher than that of the semiconductor layer 20, the equivalent refractive index of the activation layer 4 on top of the mesa 100 is higher at its middle portion A than at the peripheral portions B. The difference in the refractive indexes is lower than in an conventional BH structure laser. A light beam under guidance has a width W1 and, with the refractive index higher at the middle portion, a single transverse mode may be maintained in the presence of a wider W |
| 公开日期 | 1993-08-06 |
| 申请日期 | 1984-03-07 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84176]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | SUZUKI TOORU,KOBAYASHI KENICHI. -. JP1993052678B2. 1993-08-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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