Semiconductor light-emitting element
文献类型：专利
| 作者 | KIMURA SOICHI; ISHIGURO NAGATAKA |
| 发表日期 | 1990-10-02 |
| 专利号 | JP1990246289A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To contrive the simplification of a process capable of forming an element by one time of an epitaxial growth by a method wherein a second layer, a p-type InP clad layer, which is a growth layer, is grown on the upper part of a mesa as well. CONSTITUTION:A first process for forming selectively a mesa 16 on a p-type InP substrate 11, a second process for growing selectively an n-type InP blocking layer 12 on the substrate excepting the upper part of the mesa 16, a third process for growing a p-type InP blocking layer (a p-type InP clad layer) 13 on the whole surface of the substrate 11 including the upper part of the mesa 16 as well or for growing selectively the layer 13 excepting the upper part of the mesa 16, a fourth process for growing a p-type or n-type third layer (an InGaAsP active layer) 14 on the mesa 16 and a fifth process for growing an n-type fourth layer (an n-type InP clad layer) 15 on the whole surface of the substrate 1 including the upper part of the mesa 16 as well are included. A supersaturated solution having a comparatively small degree of supersaturation is used in the second process and a supersaturated solution of a comparatively large degree of supersaturation is used in the third and fifth processes. Thereby, the formation of an element becomes possible by one time of an epitaxial growth only. |
| 公开日期 | 1990-10-02 |
| 申请日期 | 1989-03-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84180]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KIMURA SOICHI,ISHIGURO NAGATAKA. Semiconductor light-emitting element. JP1990246289A. 1990-10-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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