Semiconductor laser device
文献类型：专利
| 作者 | ONO YUICHI; KASHIWADA YASUTOSHI; KAJIMURA TAKASHI; KAYANE NAOKI; NAKATSUKA SHINICHI |
| 发表日期 | 1986-08-01 |
| 专利号 | JP1986171185A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize the characteristics by method wherein an impurity introduced region is made to function as the current block layer by selectively introducing an N-type impurity to a P-type semiconductor substrate, and then a double-hetero structure is formed on the substrate and the impurity introduced region. CONSTITUTION:After a stripe mask is formed on the P GaAs substrate 11, Si is implanted. Thereafter, the mask on the substrate is removed, and the wafer is subjected to capless annealing in a thermal decomposition furnace of organic metal, thus forming an N-GaAs layer 12. At this time, a stripe section 13 is formed immediately under the mask. Then, organometallic compounds are introduced to successive growth of a P-Ga0.55Al0.45As clad layer 14, an undoped Ga0.86Al0.14As active layer 15, an N-Ga0.55Al0.45As clad layer 16, and an N GaAs layer 17. An N-electrode 18 and a P-electrode 19 are formed to this epitaxial wafer. This process enables the flat formation of epitaxial grown layer because of the formation of a current structure layer in the flat substrate and the enlargement in selecting width of the growing method. |
| 公开日期 | 1986-08-01 |
| 申请日期 | 1985-01-25 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84183]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | ONO YUICHI,KASHIWADA YASUTOSHI,KAJIMURA TAKASHI,et al. Semiconductor laser device. JP1986171185A. 1986-08-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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