Semiconductor laser element
文献类型：专利
| 作者 | HAYAKAWA TOSHIROU; TAKAGI TOSHIKIMI; OOTSUKA NAOTAKA |
| 发表日期 | 1982-06-26 |
| 专利号 | JP1982103385A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To stabilize the operation of the laser element of double heterostructure of Ga1-xAlxAs and to prolong the lifetime thereof by interposing a buffer layer with no added Te between an activated layer and a clad layer of added Te. CONSTITUTION:An N type GaAs current restricting layer 22 is formed on a P type GaAs substrate 21, a V shaped groove 27 is provided by applying anisotropic etching thereto and a P type Ga0.62Al0.28As activated layer 24 with added Ge is laid on a P type Ga0.45Al0.55As clad layer 23 with Zn added whereby the crystallinity and flatness of the activated layer are improved. Next, an N type Ga0.45Al0.35As clad layer 25 with Te added is grown through the intermediary of an N type Ga0.82Al0.18As buffer layer 30 with Si added, which contains no Te, and the N type clad layer containing defects caused by Te and the activated layer promoting deterioration by re-connection of an electronic positive hole are separated from each other, whereby the deterioration is prevented. Then, an N type GaAs cap layer 26 with Te added and electrodes 1 and 8 are laminated and thereby the device is completed. The thickness of the activated layer 24 and of the buffer layer 30 is made maximum in the center of the V shaped groove and thus the light in the layer 24 is led effectively to the central part of the device. |
| 公开日期 | 1982-06-26 |
| 申请日期 | 1980-12-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84192]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | HAYAKAWA TOSHIROU,TAKAGI TOSHIKIMI,OOTSUKA NAOTAKA. Semiconductor laser element. JP1982103385A. 1982-06-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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