Semiconductor laser
文献类型：专利
| 作者 | SEKII HIROSHI |
| 发表日期 | 1989-04-19 |
| 专利号 | JP1989100985A |
| 著作权人 | OMRON TATEISI ELECTRON CO |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To make the effective refractive index change gently in the direction of a junction to expand a region where a fundamental mode stably operates, and enable the high output operation of the fundamental mode, by forming an active layer flatly, and changing the the thickness of crystal layer in a multilayer type or an inclination type. CONSTITUTION:By processing twice the trench of a substrate 1, the thickness of a N-AlyGa1-yAs clad layer 2 is gently changed. The trench processing is performed, for example, as follows. Firstly, a 6mum-wide stripe type window is made in photo resist formed on the substrate 1, and etched slightly to a depth of about 0.5mum by using ammonia system etching liquid. By a second lithography process, a 4mum-wide stripe type window is made in the photo resist. By using phosphoric acid system etching liquid, a trench about 2mum-deep is formed, which has a shape like an inverted trapezoid. Thus a trench having a two-step inclined surface of different inclination angle is formed. The effective refractive index in the vicinity of the active layer 3 has a distribution wherein the trench form made on the substrate 1 is turned upside down. |
| 公开日期 | 1989-04-19 |
| 申请日期 | 1987-10-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OMRON TATEISI ELECTRON CO |
| 推荐引用方式 GB/T 7714 | SEKII HIROSHI. Semiconductor laser. JP1989100985A. 1989-04-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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