Semiconductor laser device
文献类型：专利
| 作者 | TANAKA TOSHIO |
| 发表日期 | 1990-06-28 |
| 专利号 | JP1990168689A |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To enable a low threshold and low current operation by bringing a semiconductor substrate to semi-insulating properties, forming the semiconductor substrate nearest to a striped groove of an epitaxial layer up to the rear and burying an opening section with an electrode metal. CONSTITUTION:A stripe window is shaped onto a semi-insulating GaAs substrate 11, and a hole is formed to an inverted V groove shape through etching by a reaction-rate controlling type etchant. A P-type GaAs epitaxial layer 12 and an N-type GaAs current blocking layer 2 are subjected to epitaxial growth continuously onto the semi-insulating GaAs substrate 11 to which the hole is formed. A stripe groove 7 is shaped, a P-type AlGaAs lower clad layer 3, a P-type GaAs active layer 4, an N-type AlGaAs upper clad layer 5 and an N-type GaAs contact layer 6 are formed while using the groove 7 as a substrate, and the semi-insulating GaAs substrate 11 is formed in specified thickness. Accordingly, a semiconductor laser device enabling a low threshold and low current operation and having high affiance can be acquired. |
| 公开日期 | 1990-06-28 |
| 申请日期 | 1988-12-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84200]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | TANAKA TOSHIO. Semiconductor laser device. JP1990168689A. 1990-06-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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