Manufacture of semiconductor laser
文献类型：专利
| 作者 | TAKAHASHI KAZUHISA; SAKAKIBARA YASUSHI; GOTO KATSUHIKO; TAKEMOTO AKIRA; NAMISAKI HIROBUMI |
| 发表日期 | 1988-02-22 |
| 专利号 | JP1988041095A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To shape a groove whose depth is uniform and accurate by a method wherin a semiconductor layer is processed by means of one type of etchant which does not react to a stopper layer and by means of another type of etchant which reacts to the stopper layer only. CONSTITUTION:A P-InP buffer layer 2, a stopper layer 12, an N-InP electric- current constricting layer 3 and an N-InP electric-current constricting layer 4 are successively formed on a P-InP substrate 1 by means of a liquid-phase epitaxial growth method and a belt-shaped groove is formed in the direction by means of photoetching so that this groove can penetrate the P-InP electric-current constricting layer 4 and the N-InP electric-current constricting layer 3. Then, after this assembly has been etched by means of hydrochloric acid for a prescribed duration, the tip of this groove is extended toward the direction of the side walls of this groove and only the required width on the surface of the stopper layer 12 is exposed at the bottom of this groove. Then, this assembly is etched by means of another type of etchant such as sulfuric acid, and the exposed part at the stopper layer 12 is removed. |
| 公开日期 | 1988-02-22 |
| 申请日期 | 1986-08-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84202]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | TAKAHASHI KAZUHISA,SAKAKIBARA YASUSHI,GOTO KATSUHIKO,et al. Manufacture of semiconductor laser. JP1988041095A. 1988-02-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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