半導体レ-ザ
文献类型：专利
| 作者 | 今仲 行一 |
| 发表日期 | 1995-04-10 |
| 专利号 | JP1995032288B2 |
| 著作权人 | オムロン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ |
| 英文摘要 | PURPOSE:To enable the arbitrary control of a waveguide type by the impression of an external voltage by a construction wherein the entire surface on the substrate side is formed into an electrode and an electrode on the growth layer side is divided into an electrode for current injection located in the central part in the lateral direction and electrodes for voltage impression formed on the opposite sides of said electrode with an insulating film interposed between them. CONSTITUTION:An N-side electrode 6 and electrodes 7 for voltage impression are provided with an electrode 8 for injection of current. By impressing a volt age between the electrodes 7 and the electrode 6, the refractive index in the part of an active layer 3 located below the electrodes 7, i.e. in the part/of the active layer 3 except for the part just below the electrode 8, is made small. As the result, laser oscillated beams generated by the injection of current from the electrode 8 are confined also in the lateral direction, and thus this semicon ductor laser is made to have a refractive index waveguide structure. According to this construction, the transfer from a gain waveguide type to a refractive waveguide type is enabled, and also the transfer to an intermediate (refractive index + gain)waveguide type is enabled. |
| 公开日期 | 1995-04-10 |
| 申请日期 | 1986-04-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84203]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | オムロン株式会社 |
| 推荐引用方式 GB/T 7714 | 今仲 行一. 半導体レ-ザ. JP1995032288B2. 1995-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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