Semiconductor laser element
文献类型：专利
| 作者 | IWAI NORIHIRO; MATSUMOTO SHIGETO; MAKINO TOSHIHIKO |
| 发表日期 | 1990-03-07 |
| 专利号 | JP1990066983A |
| 著作权人 | FURUKAWA ELECTRIC CO LTD:THE |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a plurality of light emitting wavelengths accurately and to make it possible to perform direct coupling to a piece of fiber by arranging a plurality of laser-light emitting parts comprising quantum well structures having the different quantum well widths on the same semiconductor substrate in close proximity in an electrically insulated pattern. CONSTITUTION:An N-type InP clad layer 2, a Ga0.47In0.53As/InP quantum well active layer 11, a P-type InP clad layer 4 and p InGaAsP cap layer 5 are sequentially grown on a semi-insulating InP substrate Thereafter, an N-type InP clad layer 2', Ga0.47In0.53As/InP quantum well active layer 11', an N-type InP clad layer 2' and a p type InGaAsP cap layer 5' are sequentially grown on both sides of a mesa. Then, a Zn diffused region 8 is formed, and a current path is formed. Laser oscillation at the light emitting wavelength of 1-3mum is obtained from the quantum well active layer in an embedded type laser-light emitting part 30. Laser oscillation at the light emitting wavelength of 55mum is obtained from the quantum well active layer 11' of a diffused-stripe light emitting part 40. A plurality of the light emitting parts are arranged in close proximity at an interval of about 10mum in an electrically isolated pattern. Thus direct connection to an optical fiber can be obtained. |
| 公开日期 | 1990-03-07 |
| 申请日期 | 1988-08-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84209]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FURUKAWA ELECTRIC CO LTD:THE |
| 推荐引用方式 GB/T 7714 | IWAI NORIHIRO,MATSUMOTO SHIGETO,MAKINO TOSHIHIKO. Semiconductor laser element. JP1990066983A. 1990-03-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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