Manufacture of semiconductor laser device
文献类型：专利
| 作者 | SAGARA MINORU; TAMURA HIDEO; IIDA SEIJI; KURIHARA HARUKI |
| 发表日期 | 1983-11-08 |
| 专利号 | JP1983191484A |
| 著作权人 | TOKYO SHIBAURA DENKI KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser device |
| 英文摘要 | PURPOSE:To markedly improve the yield rate of production for the titled semiconductor device by a method wherein a filament-formed crystal grown substrate, having at least a part of which is protruded from a liquid-phase crystal growth stopping mask, is used for the growth of liquid-phase crystal. CONSTITUTION:Protrusions 22 and 23 are formed on an n-GaAs substrate 16. When wetting of solution is going to be generated on the substrate surface having a main stripe window, a positional accuracy of + or -1S-s1/2 is required when a pattern formation is performed, because an SiO2 film should not be left on the upper surface of the protrusions 21 and 23 of the substrate. An n-Al0.3 Ga0.7As clad 24, an undope-GaAs active region 25, a P-Al0.3Ga0.7As clad 26 and a P-GaAs ohmic electrode 27 are successively grown by performing a liquid- phase crystal growing method on the substrate. Then, an insulating film 28 of SiO2 is provided on the region excluding a part of a main stripe, and after electrodes 29 and 30 have been provided on the surface of P-side and N-side of the substrate, the chips of semiconductor laser are cut out. On the chips obtained through above procedures, the difficulties in crystal growth in striped state which have heretofore been experienced are not observed now. |
| 公开日期 | 1983-11-08 |
| 申请日期 | 1982-05-06 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOKYO SHIBAURA DENKI KK |
| 推荐引用方式 GB/T 7714 | SAGARA MINORU,TAMURA HIDEO,IIDA SEIJI,et al. Manufacture of semiconductor laser device. JP1983191484A. 1983-11-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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