Manufacture of integrated semiconductor laser
文献类型：专利
| 作者 | SHINOZAKI KEISUKE; FURUKAWA RYOZO; WATANABE NOZOMI |
| 发表日期 | 1989-09-26 |
| 专利号 | JP1989241191A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of integrated semiconductor laser |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser easily even in case where there are many stripes to be integrated, by making a distance unequal between an active area and an optical absorption area in each guided wave path. CONSTITUTION:A p-type clad layer 4 and an optical wave guide 5 are deposited in this order by a liquid phase growth method on a current blocking layer (optical absorption layer) 2 having a stripe 3 on it. When depositing the p-type clad layer 4 by the liquid phase growth method, the current blocking layer 2 near the stripe 3a in the center of a substrate is melt-etched by about 0.5mum by using a melt to grow this p-type clad layer 4 so that the melt becomes oversaturated just before completion of deposition of the p-type clad layer 4. In this manner, stages are generated on the optical absorption layer 2, resulting in formation of an integrated semiconductor layer having unequal distance between an active area and an optical absorption area in each guided wave path. This method makes it possible to manufacture a semiconductor laser even when there are many stripes to be integrated. |
| 公开日期 | 1989-09-26 |
| 申请日期 | 1988-03-23 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84216]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | SHINOZAKI KEISUKE,FURUKAWA RYOZO,WATANABE NOZOMI. Manufacture of integrated semiconductor laser. JP1989241191A. 1989-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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