Semiconductor laser
文献类型：专利
| 作者 | TSUKIKI KAZUNORI |
| 发表日期 | 1989-08-29 |
| 专利号 | JP1989215088A |
| 著作权人 | SONY CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To keep leak current from flowing into a bonding adhesive layer even if a laser diode is bonded on a heat sink or other equipment, by forming insulation areas in the depth to reach at least a clad layer on a semiconductor substrate side through a clad layer and an active layer, on both sides of a laser diode near the active layer. CONSTITUTION:On both sides 11 of a laser diode, insulation regions 16 are formed in the depth to reach the surface of a semiconductor substrate 1 from a second clad layer 4 through an active layer 3 and a first clad layer 2. The insulation areas 16 are formed by conducting selective ion implantation of boron, hydrogen or other material after formation of the clad layer 4 or the adhesive layer 5 in the manufacturing process of the laser diode. Even if the laser diode manufactured by such a method is bonded on a heat sink by solder 15 at a surface 12 near the active layer 3, leak current is not generated by the solder 15 when the solder 15 climbs up since there are the insulation regions 16 on both sides 11 of the laser diodes. Therefore, an operation failure of the semiconductor laser caused by generation of leak current can be avoided and an yield can also be increased. |
| 公开日期 | 1989-08-29 |
| 申请日期 | 1988-02-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84218]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORP |
| 推荐引用方式 GB/T 7714 | TSUKIKI KAZUNORI. Semiconductor laser. JP1989215088A. 1989-08-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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