Semiconductor light-emitting device and manufacture thereof
文献类型：专利
| 作者 | YAMAMOTO MOTOYUKI; TSUBURAI YASUHIKO |
| 发表日期 | 1988-07-09 |
| 专利号 | JP1988166285A |
| 著作权人 | TOSHIBA CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device and manufacture thereof |
| 英文摘要 | PURPOSE:To prevent decrease in acceptor concentration at the surface of previously deposited layers and of the uppermost layer and to improve element characteristic, by supplying a p-type dopant into a crystal growth furnace for forming regrowth layers continuously from the point before the growth of the layers to the point after the completion of the growth. CONSTITUTION:A stripe groove 21 having a width of 2mum is formed by etching a clad layer 13 so as to leave a thickness of 0.2mum. The treated substrate is inserted in an MOCVD crystal growth furnace. DEZn and arsine (AsH3) are supplied into the furnace from five minutes before increasing the temperature. Crystal growth is performed under the following conditions, for example: growth temperature=75 deg.C, normal pressure, V/III ratio (molar ratio of V compound to III compound)=20, growing rate (GaAs)=0.2mum/min, and total flow of hydrogen=10l/min. DEZn is initially supplied at a molar ratio of 3X10/III compound for example so as to clean an oxide film on the top. Then, DEZn is supplied at a flow rate of 5X10/III compound so that an optical waveguide layer 15 and a clad layer 16 are deposited. Supply of DEZn is continued at 5X10/III compound still after deposition of a contact layer 17 until it is stopped when room temperature is achieved. |
| 公开日期 | 1988-07-09 |
| 申请日期 | 1986-12-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84219]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | YAMAMOTO MOTOYUKI,TSUBURAI YASUHIKO. Semiconductor light-emitting device and manufacture thereof. JP1988166285A. 1988-07-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。