Semiconductor laser
文献类型：专利
| 作者 | AKIBA SHIGEYUKI; MATSUSHIMA YUICHI; USAMI MASASHI |
| 发表日期 | 1987-12-18 |
| 专利号 | JP1987291985A |
| 著作权人 | KOKUSAI DENSHIN DENWA CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser oscillating in a wavelength of 2-3 mum having a wide range of operating temperatures without remarkably increasing an oscillation threshold value, by forming a part or all of at least one of two clad layers of a specific compound semiconductor layer. CONSTITUTION:On an InAs substrate, there are formed an N-type InAsPSb layer 2 as a second clad layer, an N-type InAsPSb light-emitting layer 3, a P-type A GaAsSb layer 13 as a first clad layer and a P-type InAsPSb layer 4 one over another and electrodes 5 and 6 are provided. A part or all of the clad layer 13 is provided by a tetra-or penta-component compound semiconductor layer consisting of a combination of Al, As, Sb and at least one of In and Ga. In the layer 13, crystals can be grown to a composition corresponding to a forbidden band width of about 5 eV while matching their lattices with the substrate Thus, the layer 13 is allowed to have a width of the forbidden band which is greatly different from that of the light-emitting layer 3. Therefore, if a temperature is raised, a threshold value is not increased thereby since electrons are effectively entrapped in the layer 3. |
| 公开日期 | 1987-12-18 |
| 申请日期 | 1986-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84223]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOKUSAI DENSHIN DENWA CO LTD |
| 推荐引用方式 GB/T 7714 | AKIBA SHIGEYUKI,MATSUSHIMA YUICHI,USAMI MASASHI. Semiconductor laser. JP1987291985A. 1987-12-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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