Semiconductor laser device
文献类型：专利
| 作者 | ANDO KOJI; YAGI TETSUYA |
| 发表日期 | 1992-04-15 |
| 专利号 | JP1992113688A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To eliminate a dislocation even if p-type dopant and n-type dopant are precipitated by employing Zn as the p-type dopant of a p-n junction and S and Se having equal ratio of atomic number to the composition ratio of the S to Se for constituting a ZnSxSe1-x compound having equal lattice constant to that of active layer and clad layer as the n-type dopant. CONSTITUTION:When an n-type AlGaInP lower clad layer 2 and an n-type GaAs current block layer 6 are formed, the S of the n-type dopant and the ratio of atomic numbers of doping of the S are set equal to the composition ratio of the S and Se for constituting a ZnSxSe1-x having equal lattice constant to those of the layers 3 and 2. The cluster 8 of the ZnSxSe1-x is precipitated in a boundary between the layers 3 and 2 due to the movements of Zn atoms of the p-type dopant and the S atoms and Se atoms of the n-type dopant. Since the cluster 8 of the ZnSxSe1-x is equal at the lattice constant to the layers 3, 2, a distortion field is not generated, a dislocation generation-growth source is not generated, and deterioration of a semiconductor laser is not proceeded. Thus, the reliability of the laser can be greatly improved. |
| 公开日期 | 1992-04-15 |
| 申请日期 | 1990-09-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84226]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | ANDO KOJI,YAGI TETSUYA. Semiconductor laser device. JP1992113688A. 1992-04-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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