Semiconductor laser devices
文献类型：专利
| 作者 | HIRATA, SHOJI C/O PATENTS DIVISION |
| 发表日期 | 1990-05-30 |
| 专利号 | EP0288224A3 |
| 著作权人 | SONY CORPORATION |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser devices |
| 英文摘要 | A semiconductor laser device including a first semiconductor layer (16) having a strip waveguide structure (16) to obtain optical confinement, and a second semiconductor layer (20) having a ridge waveguide structure (20a) for defining an electrical current passage region. The strip waveguide structure (16a) has a first width, and projects on the first semiconductor layer (16), extending over the central area of the first semiconductor layer (16) in a longitudinal direction. The ridge waveguide structure (20a) projects on the second semiconductor layer (20) and extends in the longitudinal direction with a second width which corresponds to the strip waveguide structure (16a). The strip waveguide structure (16a) co-operates with the ridge waveguide structure (20a) to produce a difference between the refractive index of a centre region which extends in the longitudinal direction of the second semiconductor layer (20) and that of a neighbouring region, due to the difference in thicknesses between the two, so that the centre region serves as an optical waveguide. |
| 公开日期 | 1990-05-30 |
| 申请日期 | 1988-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84228]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SONY CORPORATION |
| 推荐引用方式 GB/T 7714 | HIRATA, SHOJI C/O PATENTS DIVISION. Semiconductor laser devices. EP0288224A3. 1990-05-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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