High-power semiconductor laser device in which near-edge portions of active layer are removed
文献类型：专利
| 作者 | FUKUNAGA, TOSHIAKI |
| 发表日期 | 2003-06-17 |
| 专利号 | US6580738 |
| 著作权人 | NICHIA CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | High-power semiconductor laser device in which near-edge portions of active layer are removed |
| 英文摘要 | Heating at the end face while operating in a high output is prevented and reliability improves in a semiconductor laser device. On an n-GaAs substrate, laminated are n-Alz1Ga1-z1As lower cladding layer, an n- or i-In0.49Ga0.51P lower optical waveguide layer, an Inx3Ga1-x3As1-y3Py3 quantum well active layer, a p- or i-In0.49Ga0.51P upper first optical waveguide layer, a GaAs cap layer and SiO2 film. Then a width of about 20 mum of the SiO2 film is removed inwardly from the cleaved surface. Using the SiO2 film as a mask, the cap layer near the end face and the upper first optical waveguide layer are removed. Then the SiO2 film, the quantum well active layer near the end face and the remaining cap layer are removed. A p- or i-In0.49Ga0.51P upper second optical waveguide layer, a p-Alz1Ga1-z1As upper cladding layer and a p-GaAs contact layer are deposited thereon. |
| 公开日期 | 2003-06-17 |
| 申请日期 | 2001-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84238]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NICHIA CORPORATION |
| 推荐引用方式 GB/T 7714 | FUKUNAGA, TOSHIAKI. High-power semiconductor laser device in which near-edge portions of active layer are removed. US6580738. 2003-06-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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