Distributed feedback type semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FURUKAWA RYOZO; SHINOZAKI KEISUKE; WATANABE AKIRA |
| 发表日期 | 1988-12-21 |
| 专利号 | JP1988312689A |
| 著作权人 | OKI ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Distributed feedback type semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a distributed feedback semiconductor laser through which single longitudinal mode oscillations are possible by providing the irregularity structure of waveforms in the direction intersecting perpendicularly to the stripe direction at both sides of stripe-like grooves which are prepared at a GaAs base. CONSTITUTION:Waveforms 35 are formed at each adequate pitch at the surface of an n-type GaAs layer 31b. A groove 33 having a V-shaped width W of a sectional form in the direction intersecting perpendicularly to the stripe direction is prepared. And then, this structure allows a p-type AlxGa1-xAs lower side clad layer 37, an AlyGa1-yAs active layer 39, an n-type AlxGa1-xAs upper side clad layer 41, and an n-type GaAs cap layer 43 to grow in order from the base side upward on the groove 33 as well as on the waveforms 35 with an LPE technique. As mentioned above, the waveforms prepared at the GaAs base surfaces of groove's both sides develop distribution of an effective refractive index to bring about a diffraction grating for use in wavelength selection. Thus, oscillations are performed by a wavelength which meets a Bragg reflection condition according to the diffraction grating, in other words, by a single longitudinal mode. |
| 公开日期 | 1988-12-21 |
| 申请日期 | 1987-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OKI ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | FURUKAWA RYOZO,SHINOZAKI KEISUKE,WATANABE AKIRA. Distributed feedback type semiconductor laser and manufacture thereof. JP1988312689A. 1988-12-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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