Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OKAWA KAZUHIRO; UENO AKIRA; MITSUYU TSUNEO |
| 发表日期 | 1992-09-29 |
| 专利号 | JP1992273494A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To form a semiconductor laser element which enables oscillation of visible short wavelength by forming the semiconductor laser element with refraction factor waveguide type double heterostructure by using II-VI compound semiconductor. CONSTITUTION:An N-type chlorine-added ZnxCd1-xS layer 2 of especially high carrier density is formed by epitaxial growth on an N-type ZnSe substrate An N-layer 3 (A layer) is a ZnxCd1-xS mixed crystalline epitaxial film having the same composition X as the N-layer 2, and halogen element such as chlorine is used as impurities. An active layer 4 (C layer) is ZnSe, and a P-type layer 5 (B layer) is nitrogen (N) added SnxCd1-xS mixed crystal. The active layer 4 is enclosed with the P-type layer 5, the N-type layer 3 and a high resistance SnxCd1-xS mixed crystalline layer 6 (D layer). A Pt electrode 7 is further attached to the P-type ZnxCd1-xS layer 5. |
| 公开日期 | 1992-09-29 |
| 申请日期 | 1991-02-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84247]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OKAWA KAZUHIRO,UENO AKIRA,MITSUYU TSUNEO. Semiconductor laser and manufacture thereof. JP1992273494A. 1992-09-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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