Semiconductor laser element
文献类型：专利
| 作者 | YAMAMOTO SABUROU; MURATA KAZUHISA; HAYASHI HIROSHI; TAKENAKA TAKUO |
| 发表日期 | 1982-10-23 |
| 专利号 | JP1982172789A |
| 著作权人 | SHARP KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a laser element having low light loss and low reactive current by a method wherein a crystal layer for laser operation forming a hetero junction and limiting an active region is grown on an N type GaAs layer providing a stripe shaped groove and having a carrier concentration of 3X 10cm or more and a refractive index type waveguide mechanism is composed. CONSTITUTION:An N type GaAs layer 26 having carrier concentration of 3X 10cm or more is piled on a P type GaAs substrate 25 and a V-shaped stripe groove 27 entering into the substrate 25 is perforated at the central section. Next, a P type GaAlAs clad layer 21, N type or P type GaAlAs active layer 22, N type GaAlAs clad layer 23, and N type GaAS cap layer 24 are stacked and grown on the whole surface including the groove 27. An Au-Ge-Ni alloy N side electrode and a P side electrode such as Au-Zn are formed on the layer 24 and the rear of the substrate 25 respectively and resonant end surfaces are formed b y cleavage. In this way, the difference in a real number section is formed larger than the difference in imaginary number section in the difference in effective double refractive index at the inside and outside of the groove 24 and current confinement to the groove 27 is made perfect. |
| 公开日期 | 1982-10-23 |
| 申请日期 | 1981-04-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84248]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KK |
| 推荐引用方式 GB/T 7714 | YAMAMOTO SABUROU,MURATA KAZUHISA,HAYASHI HIROSHI,et al. Semiconductor laser element. JP1982172789A. 1982-10-23. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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