Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | FUJII HIROAKI; KOBAYASHI KENICHI |
| 发表日期 | 1989-02-02 |
| 专利号 | JP1989032692A |
| 著作权人 | 日本電気株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve reliability, and to facilitate manufacture by manufacturing a semiconductor laser having index guide structure through one-time MOVPE growth by utilizing the growth characteristics of a specific semiconductor material. CONSTITUTION:A mesa (a reverse mesa) in the (111) direction is formed to a GaAs (100) substrate 6, and a GaAs buffer layer 9 is laminated onto the mesa. GaAs on the mesa takes a triangular shape because it holds a (111) B face. A clad layer 2 consisting of AlGaInP or AlInP, a GaInP active layer 1, a clad layer 3 composed of AlGaInP or AlInP, and a GaAs current blocking layer 4 are laminated through a MOVPE method in succession. Since growth on the (111) B face is extremely slow in the active layer 1, a laser having BH structure in which the active layer 1 is buried with the clad layer in the upper section of the mesa is shaped. A current injection path is manufactured by Zn diffusion 10. Since the laser can be manufactured by one-time MOVPE growth, manufacture is facilitated, and has high reliability. |
| 公开日期 | 1989-02-02 |
| 申请日期 | 1987-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84254]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電気株式会社 |
| 推荐引用方式 GB/T 7714 | FUJII HIROAKI,KOBAYASHI KENICHI. Semiconductor laser and manufacture thereof. JP1989032692A. 1989-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。