Surface light emitting laser and manufacture thereof
文献类型：专利
| 作者 | OGURA MUTSURO |
| 发表日期 | 1990-09-19 |
| 专利号 | JP1990237192A |
| 著作权人 | KOGYO GIJUTSUIN |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Surface light emitting laser and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain an active layer of a small width and to realize the operation with a low threshold current by making a semiconductor double hetero structure in the direction parallel to the main surface of a substrate, the structure comprising a semiconductor hetero multilayer film, an active layer, and a clad layer, an serving as a light-waveguide path in a cross-section plane of said semiconductor hereto multilayer film. CONSTITUTION:A semiconductor hereto multilayer film 20 and an active layer 30 provided along a crosssectional plane of said multilayer film from a first semiconductor hereto structure. Meanwhile, the active layer 30 and a clad layer 40 from another semiconductor hetero structure. Accordingly, a semiconductor double hetero structure is built up in the direction parallel to the main surface of a substrate, in which the semiconductor hetero multilayer film 20 is of a first conductive type and the clad layer 40 is of a second conductive type. As a result, when a forward current to the p-n junction which is to be formed is supplied, laser oscillation occurs in the active layer 3 0 and the laser beam is emitted along a photo-waveguide path which is formed in the direction perpendicular to the substrate main surface. Thus, the width of the active layer can be made 0.1mum or less easily and the operation with a low threshold current becomes possible. |
| 公开日期 | 1990-09-19 |
| 申请日期 | 1989-03-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84257]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KOGYO GIJUTSUIN |
| 推荐引用方式 GB/T 7714 | OGURA MUTSURO. Surface light emitting laser and manufacture thereof. JP1990237192A. 1990-09-19. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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