Semiconductor laser device
文献类型：专利
| 作者 | KAJIMURA, TAKASHI; HIRAO, MOTOHISA; NAKAMURA, MICHIHARU; KURODA, TAKAO; YAMASHITA, SHIGEO; UMEDA, JUNICHI |
| 发表日期 | 1980-02-06 |
| 专利号 | EP0007730A1 |
| 著作权人 | HITACHI, LTD. |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device of the double-hetero structure has a semiconductor substrate (4), a semiconductor active layer (1) and cladding layers (2,3) sandwiching the active layer (1). In order to achieve a laser which can operate at a short wavelength, e.g. about 0.6 µm, the substract (4) is GaAstP1-t (0.54 ≦ t ≦ 0) and the active layer (1) is GayIn1-yAsxP1-x (0.52 ≦ y ≦ 0 and 0 ≦ x ≦ 0). The first cladding layer (2) is GapAl1-pAsqP1-q (0 ≦ p ≦ 0.91 and 0.47 ≦ q ≦ 0) and the second cladding layer (3) is Gap,Al1-P,Asq,P1-q, (0 ≦ p' ≦ 0.91 and 0.47 ≦ q' ≦ 0). The two cladding layers (2,3) are of opposite conductivity type. The active layer (1) has an optical confinement region of refractivity higher than that of the cladding layers and a band gap narrower than that of the cladding layers. |
| 公开日期 | 1980-02-06 |
| 申请日期 | 1979-07-09 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84258]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | KAJIMURA, TAKASHI,HIRAO, MOTOHISA,NAKAMURA, MICHIHARU,et al. Semiconductor laser device. EP0007730A1. 1980-02-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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