Semiconductor light emission device
文献类型：专利
| 作者 | SHIMA KATSUTO |
| 发表日期 | 1987-02-02 |
| 专利号 | JP1987024682A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emission device |
| 英文摘要 | PURPOSE:To obtain a waveguide mechanism which guides the light efficiently and reduce a leakage current produced by minority carriers by providing a layer wider than an activation layer and serving as a light guide and also as a minority carrier stopper directly under the activation layer. CONSTITUTION:An N-type InP buffer layer 2, an N-type InGaAsP stripe layer 3 which serves as a light guide and also as a minority carrier stopper, an undoped InGaAsP activation layer 4, a P-type InP clad layer 5 and a P-type InGaAsP contact layer 6 are successively formed on an N-type InP substrate Then a silicon oxide film is formed and left in a stripe of 15mum width by photolithography. Then the layers are etched to the depth of the buffer layer 2 with a methanol bromide-based etchant to form a stripe of 10mum width and then the InP layers 2 and 5 are subjected to side etching with a hydrochloric acid system selective etchant. Further, after the sides of the activation layer 4 are also etched by the methanol bromide-based etchant, a P-type InP layer 7 and an N-type InP layer 8 are buried by liquid phase deposition. |
| 公开日期 | 1987-02-02 |
| 申请日期 | 1985-07-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84259]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | SHIMA KATSUTO. Semiconductor light emission device. JP1987024682A. 1987-02-02. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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