Semiconductor laser device
文献类型：专利
| 作者 | YAGI TETSUYA; KUBOTA MASAYUKI |
| 发表日期 | 1988-06-04 |
| 专利号 | JP1988132496A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To allow the effect of the current inhibiting layer to be held even if the optical output is increased by forming in the current inhibiting layer a current inhibiting region which is of the same conductivity type and has a forbidden band width broader than the surrounding region. CONSTITUTION:When a semiconductor laser reaches the oscillation state, part of the light is absorbed by a first current inhibiting region 5 made of n-GaAs and is converted to an electron-positive hole pair. Electrons do not flow out into a second clad layer 4 or a third clad layer 8, but they are stored in a current inhibiting layer comprised of the first current inhibiting region 5, a second current inhibiting region 6 and a third current inhibiting region 7. If electrons are stored in the current inhibiting layer, the band in the current inhibiting layer will lift. However, even in the maximum lift state, the barrier effect of the valence band of the second current inhibiting region 6 on the minority carrier is not lost, whereby the current inhibiting effect is maintained. |
| 公开日期 | 1988-06-04 |
| 申请日期 | 1986-11-24 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84262]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | YAGI TETSUYA,KUBOTA MASAYUKI. Semiconductor laser device. JP1988132496A. 1988-06-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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