Semiconductor laser
文献类型：专利
| 作者 | IDOTA TAKESHI; HIRAYAMA NORIYUKI |
| 发表日期 | 1988-11-28 |
| 专利号 | JP1988289985A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain semiconductor laser excellent in its transversal mode of oscillation without performing a photoetching process of high resolution, by forming an active layer inside a stripe groove of InP in the direction [110] in which a plane P {T11} and a plane approximately vertical to a plane (001) are exposed so that both ends of the active layer are located on the plane P {T11}. CONSTITUTION:An active layer 8 is formed inside A stripe groove which is formed in a substrate having several epitaxial layers on an InP plane (001) and in the direction [110] in which a plane P {T11} and a plane approximately vertical to the plane (001) are exposed so that both ends of the layer 8 are located on the plane P {T11}. For example, after an InP buffer layer 2, an InP current block layer 3, and an InGaAsP mask layer 4 are formed serially on the plane (001) of the InP substrate 1 by epitaxial growth processing, a stripe groove 5 of an arrowhead shape in its cross-sectional area is formed about 2 mum in width. Next, an n-type InP clad layer 7, an InGaAsP active layer 8, a p-type InP clad layer 9 and a p-type InGaAsP contact layer 10 are formed serially by the epitaxial growth processing so that both ends of the InGaAsP active layer 8 are located on the plane P {T11} of the groove 5. |
| 公开日期 | 1988-11-28 |
| 申请日期 | 1987-05-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84263]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | IDOTA TAKESHI,HIRAYAMA NORIYUKI. Semiconductor laser. JP1988289985A. 1988-11-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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