Semiconductor laser element and manufacture thereof
文献类型：专利
| 作者 | SHIGE NORIYUKI |
| 发表日期 | 1988-11-30 |
| 专利号 | JP1988293989A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element and manufacture thereof |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element having small astigmatism by forming the principal section of a resonator in the structure of longitudinal multimode oscillation while at least one end section of the resonator is shaped index guide structure for longitudinal single-mode oscillation. CONSTITUTION:A central principal section extending over 60%-80% of a resonator 3 is formed in a narrow width resonator section 4, width (c) of which is as narrow as 3-5 mum. Both end sections of the resonator 3 are shaped in a wide resonator sections 5, width (b) of which is, for example, 5-10 mum. Since the resonator 3 is wide in the wide resonator section 5, the edge faces of the resonator 3 are not likely to be deteriorated and an electrostatic breakdown level is elevated, thus allowing the increase of an output. Since the thickness of P-type clad layers in the wide resonator sections 5 is shaped thinly, a longitudinal mode is changed into a single mode, and index guide structure is formed, thus reducing astigmatism. |
| 公开日期 | 1988-11-30 |
| 申请日期 | 1987-05-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84266]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SHIGE NORIYUKI. Semiconductor laser element and manufacture thereof. JP1988293989A. 1988-11-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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