半導体レ-ザ装置
文献类型：专利
| 作者 | 宮沢 誠一; 野尻 英章; 原 利民; 清水 明; 関口 芳信; 袴田 勲 |
| 发表日期 | 1994-06-15 |
| 专利号 | JP1994046666B2 |
| 著作权人 | キヤノン株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レ-ザ装置 |
| 英文摘要 | PURPOSE:To facilitate processes, and to improve a current control function from the outside by fitting a third terminal controlling injection currents flowing between first and second terminals by a depletion layer formed by applying a bias. CONSTITUTION:Currents are flowed between an electrode 39 and an electrode 40, and light is emitted in an active layer 33 in the vicinity of a diffusion layer 36. Since AlGaAs layers as optical confinement layers 32, 34 are formed in high resistance layers at that time, currents concentrate to the active layer 33, and the extension of currents is prevented by applying negative voltage at a reverse bias to a P diffusion layer 37 through an electrode 41, thus concentrating currents to the active layer 33, then improving the efficiency of currents. A depletion layer is shaped easily because of high P concentration in the diffusion layer 37. When the concentration of P is brought to approximately 1X10cm, the depletion layer in approximately several thousand Angstrom is formed in the active layer 33 and the optical confinement layer 34, thus controlling a laser output. |
| 公开日期 | 1994-06-15 |
| 申请日期 | 1985-01-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84268]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | キヤノン株式会社 |
| 推荐引用方式 GB/T 7714 | 宮沢 誠一,野尻 英章,原 利民,等. 半導体レ-ザ装置. JP1994046666B2. 1994-06-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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