Semiconductor laser device
文献类型：专利
| 作者 | AOYAGI, TOSHITAKA; SAKAINO, GO |
| 发表日期 | 2003-05-15 |
| 专利号 | US20030091080A1 |
| 著作权人 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | An n-InP second upper cladding layer 22 is laid on a p-InP lower cladding layer 14 while an active layer 16 whose upper and lower boundary surfaces are uniformly flat in the direction of optical waveguide is interposed therebetween. A diffraction layer 20 having a phase-shifted structure provided in the direction of optical waveguide is interposed between the lower cladding layer 14 and the active layer 16, or between the second upper cladding layer 22 and the active layer 16. The length L of the diffraction grating layer 20 in the direction of an optical waveguide is taken as L=150 cm-1; and a value kappaL, which is the product of the length L and the mean coupling factor kappa, is taken as 5.6>kappaL>3.0. |
| 公开日期 | 2003-05-15 |
| 申请日期 | 2001-11-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI DENKI KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | AOYAGI, TOSHITAKA,SAKAINO, GO. Semiconductor laser device. US20030091080A1. 2003-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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