Semiconductor laser device
文献类型：专利
| 作者 | KURIHARA, HARUKI; MATSUURA, HATSUMI |
| 发表日期 | 1996-02-27 |
| 专利号 | US5495493 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | According to a semiconductor laser device of the present invention, the thickness and carrier concentration of a current blocking layer are set so as to cause a punch through on the current blocking layer when the semiconductor laser device is driven at a current which is one to ten times as large as a maximum rated value of a DC driving current. Both a light absorbing layer and a photocurrent blocking layer are formed between the current blocking layer and a second clad layer in order to prevent a light turn-on phenomenon from occurring. The light absorbing layer contacts the second clad layer and is constituted of a semiconductor crystal of a p-type conductivity type, which is undoped or has a low concentration. The photocurrent blocking layer contacts the current blocking layer and is constituted of a semiconductor crystal of the p-type conductivity type. If the band gaps of the light absorbing layer, photocurrent blocking layer, and active layer are represented by Eab, Eocb, and Ega, respectively, the following relationships are satisfied EabEga. |
| 公开日期 | 1996-02-27 |
| 申请日期 | 1994-10-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84285]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | KURIHARA, HARUKI,MATSUURA, HATSUMI. Semiconductor laser device. US5495493. 1996-02-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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