半導体発光素子
文献类型：专利
| 作者 | 吉国 裕三; 脇田 紘一; 河村 裕一; 吉田 淳一 |
| 发表日期 | 1995-04-10 |
| 专利号 | JP1995032279B2 |
| 著作权人 | 日本電信電話株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体発光素子 |
| 英文摘要 | PURPOSE:To enable waveguide parts to be of lower loss and of high speed modulation by using an active layer of quantum well constitution and a light modulator of an electro-optical absorption type. CONSTITUTION:An InAlAs active layer 3 including a quantum well layer 4, an InAlAs optical waveguide path layer 5 and a P-type Inp clad layer 6 are formed. On an N-type Inp semiconductor substrate 2 and an electric insulated region 8, a diffraction lattice 10 and an SiN anti-reflection layer 11 are provided, then a common electrode 1, a laser electrode 9 and a modulated electrode 7 are formed. When the laser electrode 9 is impressed in forward direction and electric current injection is performed, a part, which forms a diffraction lattice 10, works as a distributed feedback type laser and oscillates. When bias in reverse direction and modulated voltage are impressed to the modulated electrode 7 a lower section of the electrode 7 works as an electric field optical absorption modulator. An oscillating light of the laser is subjected to do electric field optical absorption by the modulator, and the intensity of electric field optical absorption is varied by modulated voltage and optical output is modulated. |
| 公开日期 | 1995-04-10 |
| 申请日期 | 1985-01-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84286]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 日本電信電話株式会社 |
| 推荐引用方式 GB/T 7714 | 吉国 裕三,脇田 紘一,河村 裕一,等. 半導体発光素子. JP1995032279B2. 1995-04-10. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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