半導体レーザ装置
文献类型：专利
| 作者 | 堀内 茂樹; 八木 哲哉; 太田 洋一郎; 長谷川 和義; 河野 正基 |
| 发表日期 | 1996-03-27 |
| 专利号 | JP1996031655B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置 |
| 英文摘要 | PURPOSE:To reduce a series resistance value and to improve temperature characteristic by providing a second conductivity type buffer layer, a first conductivity type current blocking layer and a second conductivity type contact layer on a second conductivity type second clad layer having a stripelike ridge of an inverted trapezoidal section. CONSTITUTION:A first conductivity type first clad layer 2 provided on a first conductivity type board 1, and an active layer 3 provided on the layer 2 are provided, a second clad layer 4a made of a P-type AlGaAs formed on the layer 3 has an inverted trapezoidal ridge. Electrons and holes implanted into the layer 3 are recombined to radiate a light. When the supplied current is increased, an induction radiation is started to a laser oscillation, and a current narrowing is conducted in a current path along the inverted trapezoidal ridge 10a. Accordingly, even if the effective width of the injecting current to the layer 3 is narrowed, the current path is broadened at the top of the ridge 10a as compared with the bottom. Thus, a series resistance value when the injecting current value is injected to the same layers 3 is reduced, and temperature characteristic as a device is improved. |
| 公开日期 | 1996-03-27 |
| 申请日期 | 1987-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84288]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 堀内 茂樹,八木 哲哉,太田 洋一郎,等. 半導体レーザ装置. JP1996031655B2. 1996-03-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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